Epitaxial growth of SrRuO3 thin film electrode on Si by pulsed laser deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6867-6872

  Higuchi, Takamitsu ^a   Chen, Yuxi ^b   Koike, Junichi ^b   Iwashita, Setsuya ^a   Ishida, Masaya ^a   Shimoda, Tatsuya ^a  

^a SEIKO EPSON CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Buffer layer; Epitaxial thin film; Pulsed laser deposition; Si; SrO; SrRuO3

Indexed keywords

ELECTRODES; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; SILICON;

BUFFER LAYER; EPITAXIAL THIN FILM; SRO; SRRUO3;

THIN FILMS;

EID: 11344279885     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6867     Document Type: Article

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