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Journal of the Ceramic Society of Japan

Volumn 110, Issue 1281, 2002, Pages 333-337

Preparation of epitaxial YSZ thin film deposited on SiO2/Si(001) at room temperature by pulsed laser deposition (PLD)

(5) Ishigaki, Hirokazu a Yamada, Tomoaki a Wakiya, Naoki a Sinozaki, Kazuo a Mizutani, Nobuyasu a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Buffer layer; Epitaxy; SiO2; YSZ

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFER LAYER;

SILICA;

EID: 0036564985 PISSN: 09145400 EISSN: None Source Type: Journal
DOI: 10.2109/jcersj.110.333 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.