Fabrication of pseudocubic SrRuO3 (100) epitaxial thin films on Si by pulsed laser deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4, 2002, Pages

  Higuchi, Takamitsu ^a   Chen, Yuxi ^b   Koike, Junichi ^a   Iwashita, Setsuya ^a   Ishida, Masaya ^b   Shimoda, Tatsuya ^a  

^a SEIKO EPSON CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Buffer layer; Cube on cube epitaxy; Pulsed laser deposition; Si; SrO; SrRuO3; Thin film

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; EXCIMER LASERS; FILM GROWTH; MORPHOLOGY; OXIDATION; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYER; CRYSTALLINITY; DEOXIDATION; STRONTIUM OXIDE;

STRONTIUM COMPOUNDS;

EID: 0037089121     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l481     Document Type: Letter

References (13)