Microstructural investigation of pulsed-laser-deposited SrRuO3 films on Si with SrO buffer layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 12 A, 2001, Pages

  Chen, Yuxi ^a,b   Koike, Junichi ^a,b   Higuchi, Takamitsu ^a,b   Iwashita, Setsuya ^a,b   Ishida, Masaya ^a,b   Shimoda, Tatsuya ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

High resolution electron microscopy; Interface; Microstructure; SrO buffer layers; SrRuO3 films

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); PULSED LASER DEPOSITION; STRONTIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS;

CONDUCTIVE FILMS;

EID: 0035698715     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1305     Document Type: Article

References (9)