Quantitative evaluation of SiO2/Si interfaces using high-resolution high-angle annular dark field scanning transmission electron microscopy [72]

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 16, 2004, Pages 1-5

  Nakanishi, N ^a   Kikuchi, Y ^b   Yamazaki, T ^a   Okunishi, E ^c   Watanabe, K ^d   Hashimoto, I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JEOL LTD   (Japan)

^d TOKYO METROPOLITAN COLLEGE OF INDUSTRIAL TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIN; HYDROCHLORIC ACID; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; CRYSTALLIZATION; MOLECULAR MECHANICS; OXIDATION KINETICS; QUANTITATIVE ANALYSIS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SIMULATION;

EID: 11244316316     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.165324     Document Type: Article

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