메뉴 건너뛰기




Volumn 126, Issue 5, 2004, Pages 723-726

Observation of femtosecond laser-induced ablation in crystalline silicon

Author keywords

Crystalline silicon; Plasma; Pump and probe; Ultrafast microscopy

Indexed keywords

CRYSTALLINE MATERIALS; IMAGE ANALYSIS; LASER ABLATION; PLASMAS; PUMPS; ULTRAFAST PHENOMENA;

EID: 11244296085     PISSN: 00221481     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.1795224     Document Type: Article
Times cited : (19)

References (29)
  • 1
    • 0001058912 scopus 로고    scopus 로고
    • "Generation of Dense Electron-Hole Plasmas in Silicon"
    • Sokolowski-Tinten, K., and von der Linde, D., 2000, "Generation of Dense Electron-Hole Plasmas in Silicon," Phys. Rev. B, 61, pp. 2643-2650.
    • (2000) Phys. Rev. B , vol.61 , pp. 2643-2650
    • Sokolowski-Tinten, K.1    von der Linde, D.2
  • 2
    • 0001375413 scopus 로고
    • "Time-Resolved Study of Laser-Induced Disorder of Si Surfaces"
    • Tom, H. W. K., Aumiller, G. D., and Brito-Cruz, C. H., 1988, "Time-Resolved Study of Laser-Induced Disorder of Si Surfaces," Phys. Rev. Lett., 60, pp. 1438-1441.
    • (1988) Phys. Rev. Lett. , vol.60 , pp. 1438-1441
    • Tom, H.W.K.1    Aumiller, G.D.2    Brito-Cruz, C.H.3
  • 3
    • 84975649433 scopus 로고
    • "Femtosecond Imaging of Melting and Evaporation at a Photoexcited Silicon Surface"
    • Downer, M. C., Fork, R. L., and Shank, C. V., 1985, "Femtosecond Imaging of Melting and Evaporation at a Photoexcited Silicon Surface," J. Opt. Soc. Am. B, 2, pp. 595-599.
    • (1985) J. Opt. Soc. Am. B , vol.2 , pp. 595-599
    • Downer, M.C.1    Fork, R.L.2    Shank, C.V.3
  • 4
    • 0020736009 scopus 로고
    • "Second Harmonic Generation in Centro-Symmetric Semiconductors"
    • Guidotti, D., Driscoll, T. A., and Gerritsen, H. J., 1983, "Second Harmonic Generation in Centro-Symmetric Semiconductors," Solid State Commun., 46, pp. 337-340.
    • (1983) Solid State Commun. , vol.46 , pp. 337-340
    • Guidotti, D.1    Driscoll, T.A.2    Gerritsen, H.J.3
  • 5
    • 24444467704 scopus 로고
    • "Theory for the Instability of the Diamond Structure of Si, Ge, and C Induced by a Dense Electron-Hole Plasma"
    • Stampfli, P., and Bennemann, K. H., 1990, "Theory for the Instability of the Diamond Structure of Si, Ge, and C Induced by a Dense Electron-Hole Plasma," Phys. Rev. B, 42, pp. 7163-7173.
    • (1990) Phys. Rev. B , vol.42 , pp. 7163-7173
    • Stampfli, P.1    Bennemann, K.H.2
  • 7
    • 0029219497 scopus 로고
    • "Machining of Sub-Micron Holes Using a Femtosecond Laser at 800 nm"
    • Pronko, P. P., Dutta, S. K., Squier, J., Rudd, J. V., Du, D., and Mourou, G., 1995, "Machining of Sub-Micron Holes Using a Femtosecond Laser at 800 nm," Opt. Common., 114, pp. 106-110.
    • (1995) Opt. Common. , vol.114 , pp. 106-110
    • Pronko, P.P.1    Dutta, S.K.2    Squier, J.3    Rudd, J.V.4    Du, D.5    Mourou, G.6
  • 8
    • 0031268305 scopus 로고    scopus 로고
    • "Micromachining for Optical and Optoelectronic Systems"
    • Wu, M. C., 1997, "Micromachining for Optical and Optoelectronic Systems," Proc. IEEE, 85, pp. 1833-1856.
    • (1997) Proc. IEEE , vol.85 , pp. 1833-1856
    • Wu, M.C.1
  • 9
    • 35949008821 scopus 로고
    • "Femtosecond Laser Melting of Graphite"
    • Reitze, D. H., Wang, X., Ahn, H., and Downer, M. C., 1989, " Femtosecond Laser Melting of Graphite," Phys. Rev. B, 40, pp. 11986-11989.
    • (1989) Phys. Rev. B , vol.40 , pp. 11986-11989
    • Reitze, D.H.1    Wang, X.2    Ahn, H.3    Downer, M.C.4
  • 10
    • 0000977072 scopus 로고
    • "Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-induced Phase Transitions in Silicon"
    • Shank, C., Yen, R., and Hirlimann, C., 1983, "Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-induced Phase Transitions in Silicon," Phys. Rev. Lett., 50, pp. 454-457.
    • (1983) Phys. Rev. Lett. , vol.50 , pp. 454-457
    • Shank, C.1    Yen, R.2    Hirlimann, C.3
  • 11
    • 33744631139 scopus 로고
    • "Nonthermal Pulsed Laser Annealing of Si, Plasma Annealing"
    • Van Vechten, J., Tsu, R., and Saris, F., 1979, "Nonthermal Pulsed Laser Annealing of Si, Plasma Annealing," Phys. Lett., 74A, pp. 422-426.
    • (1979) Phys. Lett. , vol.74 A , pp. 422-426
    • Van Vechten, J.1    Tsu, R.2    Saris, F.3
  • 15
    • 0010594096 scopus 로고
    • "Observation of an Electronic Plasma in Picosecond Laser Annealing of Silicon"
    • Von der Linde, D., and Fabricius, N., 1982, "Observation of an Electronic Plasma in Picosecond Laser Annealing of Silicon," Appl. Phys. Lett., 41, pp. 991-3.
    • (1982) Appl. Phys. Lett. , vol.41 , pp. 991-993
    • Von der Linde, D.1    Fabricius, N.2
  • 17
    • 0000089803 scopus 로고
    • "Transient Gratings and Second-Harmonic Probing of the Phase Transformation of a GaAs Surface Under Femtosecond Laser Irradiation"
    • Govorkov, S. V., Schroder, Th., Shumay, I. L., and Heist, P., 1992, "Transient Gratings and Second-Harmonic Probing of the Phase Transformation of a GaAs Surface Under Femtosecond Laser Irradiation," Phys. Rev. B, 46, pp. 6864-6868.
    • (1992) Phys. Rev. B , vol.46 , pp. 6864-6868
    • Govorkov, S.V.1    Schroder, Th.2    Shumay, I.L.3    Heist, P.4
  • 18
    • 35949007515 scopus 로고
    • "Ultrafast Laser-Induced Order-Disorder Transitions in Semiconductors"
    • Sokolowski-Tinten, K., Bialkowski, J., and von der Linde, D., 1995, "Ultrafast Laser-Induced Order-Disorder Transitions in Semiconductors," Phys. Rev. B, 51, pp. 14186-14198.
    • (1995) Phys. Rev. B , vol.51 , pp. 14186-14198
    • Sokolowski-Tinten, K.1    Bialkowski, J.2    von der Linde, D.3
  • 19
    • 4644342675 scopus 로고
    • "Femtosecond-Time-Resolved Surface Structural Dynamics of Optically Excited Silicon"
    • Shank, C. V., Yen, R., and Hirlimann, C., 1983, "Femtosecond-Time-Resolved Surface Structural Dynamics of Optically Excited Silicon," Phys. Rev. Lett., 51, pp. 900-902.
    • (1983) Phys. Rev. Lett. , vol.51 , pp. 900-902
    • Shank, C.V.1    Yen, R.2    Hirlimann, C.3
  • 20
    • 4243628651 scopus 로고    scopus 로고
    • "Ab Initio Molecular Dynamics Simulation of Laser Melting of Silicon"
    • Silvestrelli, P. L., Alavi, A., Parrinello, M., and Frenkel, D., 1996, "Ab Initio Molecular Dynamics Simulation of Laser Melting of Silicon," Phys. Rev. Lett., 77, pp. 3149-3152.
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 3149-3152
    • Silvestrelli, P.L.1    Alavi, A.2    Parrinello, M.3    Frenkel, D.4
  • 21
    • 0003972070 scopus 로고    scopus 로고
    • Cambridge University, Cambridge, England
    • Born, M., and Wolf, E., 1999, Principles of Optics, Cambridge University, Cambridge, England.
    • (1999) Principles of Optics
    • Born, M.1    Wolf, E.2
  • 22
    • 0000164128 scopus 로고
    • "Ambipolar Diffusion of High-Density Electrons and Holes in Ge, Si, and GaAs: Many-Body Effects"
    • Young, J., and van Driel, H., 1982, "Ambipolar Diffusion of High-Density Electrons and Holes in Ge, Si, and GaAs: Many-Body Effects," Phys. Rev. B, 26, pp. 2147-2158.
    • (1982) Phys. Rev. B , vol.26 , pp. 2147-2158
    • Young, J.1    van Driel, H.2
  • 25
    • 18744364207 scopus 로고    scopus 로고
    • "Plasma and Ablation Dynamics in Ultrafast Laser Processing of Crystalline Silicon"
    • Choi, T. Y., and Grigoropoulos, C. P., 2002, "Plasma and Ablation Dynamics in Ultrafast Laser Processing of Crystalline Silicon," J. Appl. Phys., 92, pp. 4918-4925.
    • (2002) J. Appl. Phys. , vol.92 , pp. 4918-4925
    • Choi, T.Y.1    Grigoropoulos, C.P.2
  • 27
    • 0000498148 scopus 로고    scopus 로고
    • "Improved Apparatus for Picosecond Pump-and Probe Optical Measurements"
    • Capinski, W. S., and Maris, H. J., 1996, "Improved Apparatus for Picosecond Pump-and Probe Optical Measurements," Rev. Sci. Instrum., 67, pp. 2720-2726.
    • (1996) Rev. Sci. Instrum. , vol.67 , pp. 2720-2726
    • Capinski, W.S.1    Maris, H.J.2
  • 29
    • 0001089205 scopus 로고    scopus 로고
    • "Femtosecond Melting and Ablation of Semiconductors Studied With Time of Flight Mass Spectroscopy"
    • Cavalleri, A., Sokolowski-Tinten, K., Bialkowski, J., Schreiner, M., and von der Linde, D., 1999, "Femtosecond Melting and Ablation of Semiconductors Studied With Time of Flight Mass Spectroscopy," J. Appl. Phys., 85, pp. 3301-3309.
    • (1999) J. Appl. Phys. , vol.85 , pp. 3301-3309
    • Cavalleri, A.1    Sokolowski-Tinten, K.2    Bialkowski, J.3    Schreiner, M.4    von der Linde, D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.