New progress in electrochemical preparation of nanomaterials

Progress in Chemistry

Volumn 16, Issue 2, 2004, Pages 196-203

  Yin, Bingsheng ^a   Ma, Houyi ^a   Chen, Shenhao ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Electrochemical deposition; Nanoparticles; One dimension nanomaterials; Pulsed sono electrochemical method; Templates

Indexed keywords

GRAPHITE; METAL;

CHEMICAL PROCEDURES; ELECTROCHEMISTRY; NANOTECHNOLOGY; REVIEW; SURFACE PROPERTY; SYNTHESIS;

EID: 11144344547     PISSN: 1005281X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (93)

1. Franzke D, Wolaun A. J. Phys. Chem., 1992, 96: 6377-6381
2. Sun T, Seff K. Chem. Rev., 1994, 94: 857-870
3. Hagfeld A, Gratzel M. Chem. Rev., 1995, 95: 49-68
4. Schmid G. Chem. Rev., 1992, 92: 1709-1727
5. Ozin G A. Adv. Mater., 1992, 4: 612-649
6. Alivisatos A P. Science, 1996, 271: 933-937
7. Li X Y, Li S B. Progress in Chemistry, 1996, 8(3): 231-239
8. Braun E, Elchem Y, Sivan U, et al. Nature, 1998, 391: 775-778
9. Preston C K, Moskowits M. J. Phys. Chem., 1993, 97: 8495-8503
10. Reetz M T, Helbig W. J. Am. Chem. Soc., 1994, 116: 7401-7402
11. Delplancke J L, Dille J, Reisse J, et al. Chem. Mater., 2000, 12: 946-955
12. Zhu J J, Aruna S T, Koltypin Y, Gedanken A. Chem. Mater., 2000, 12: 143-147
13. Parthasarathy R, Martin C R. Nature, 1994, 369: 298-301
14. Penner R M, Martin C R. J. Electrochem. Soc., 1986, 133: 2206-2207
15. Martin C R. Adv. Mater., 1991, 3: 960-966
16. Cikby A F J, Hornyak G L, Stochert J A, Martin C R. J. Phys. Chem., 1994, 98: 2963-2971
17. Klein J D, Herrick R D I, Palmer D, et al. Chem. Mater., 1993, 5: 902-904
18. Parthasarathy R V, Martin C R. Adv. Mater., 1995, 7: 896-897
19. Wu C G, Bein T. Science, 1994, 264: 1757-1759
20. Brumlik C J, Martin C R. J. Am. Chem. Soc., 1991, 113: 3174-3175
21. Vandyke L S, Martin C R. Langmuir, 1990, 6: 1118-1123
22. Parthasarathy R V, Martin C R. Chem. Mater., 1994, 6: 1627-1632
23. Bartlett P N, Baumberg J J. Birkin P R, et al. Chem. Mater., 2002, 14: 2199-2208
24. Bartlett P N, Birkin P R, Ghanem M A. J. Chem. Soc. Chem. Commun., 2000, 1671-1672
25. Braun P V, Wiltzius P. Nature, 1999, 402: 603-604
26. Bartlett P N, Birkin P R, Ghanem M A, et al. J. Mater. Chem., 2001, 11(3): 849-853
27. Penner R M, Martin C R. Anal. Chem., 1987, 59: 2625-2628
28. Penner R M, Martin C R. J. Phys. Chem., 1989, 93: 2878-2881
29. Martin C R, Wan A L S, Cai Z, et al. J. Am. Chem. Soc., 1990, 112: 8976-8977
30. Lee S B, Martin C R. Chem. Mater., 2001, 13: 3236-3244
31. Martin C R, Nishizawa M, Jirage K B, et al. J. Phys. Chem. B, 2001, 105: 1925-1934
32. Martin C R. Science, 1994, 266: 1961-1966
33. Nishizawa M, Menon V P, Martin C R. Science, 1995, 268: 700-702
34. Khan H R, Petrikowsk K. Materials Science and Engineering C, 2002, 19: 345-348
35. Molares M E T, Brotz J, Buschmann V. Nuclear Instruments and Methods in Physics Research B, 2001, 185: 192-197
36. Valizadeh S, George J M, Leisner P. Thin Solid Films, 2002, 402: 262-271
37. Klein J D, Herrick D R, Palmer D, et al. Chem. Mater., 1993, 5: 902-904
38. Bantu A K M, Rivas J, Zaragoza G. J. Non-crystalline Solids, 2001, 287:5-9
39. Valizadeh S, George J M, Leisner P. Electrochim. Acta, 2001, 47: 856-874
40. Mbindyo J K N, Mallouk T E, Mattzela J B, et al. J. Am. Chem. Soc., 2002, 124: 4020-4026
41. Pena D J, Mbindyo J K N, Carado A J, et al. J. Phys. Chem. B, 2002, 106: 7458-7462
42. Hong B H, Bae S C, Lee C W, et al. Science, 2001, 294: 348-351
43. Huang W B, Yang Y R, Liu D H. Polymeric Materials Science & Engineering, 1995, 2: 102-108
44. Wang C W, Peng Y, Pan S L. Acta Physica Sinica, 1999, 48(11): 2146-2150
45. Shen C M, Zhang X G, Li H L. Materials Science and Engineering A, 2001, 303: 19-23
46. Su Y K, Wang Z, Li H L. Chem. J. Chinese Universities, 2002, 23(5): 944-946
47. Zeng S, Ma S, Guo T H. J. Funct. Mater., 2000, 31: 32-33
48. Tang D Y, Cai W M, Zhang J S. J. Harbin Institute of Technology, 2000, 32(2): 56-59
49. Reetz M T, Helbig W, Auaiser S, et al. Science, 1995, 267: 367-369
50. Reetz M T, Winter M, Breinbauer R, et al. Chem. Eur. J., 2001, 7: 1084-1094
51. Rodriguez-Sanchez L, Blanco M C, Lopea-Quintela M A. J. Phys. Chem. B, 2000, 104: 9683-9688
52. Pascal C, Pascal J L, Favier F, et al. Chem. Mater., 1999, 11: 141-147
53. Yu Y Y, Chang S S, Lee C L, et al. J. Phys. Chem. B, 1997, 101: 6661-6664
54. Chang S S, Shih C W, Chen C D, et al. Langmuir, 1999, 15: 701-709
55. Wang Z L. J. Phys. Chem. B, 2000, 104: 1153-1175
56. Mohamed M B, Wang Z L, El-Sayed M A. J. Phys. Chem. A, 1999, 103: 10255-10259
57. Zhu J J, Liao X H, Zhao X N. Materials Letters, 2001, 49:91-95
58. Liao X H, Zhu J J, Xu X N, et al. Chem. J. Chinese Universities, 2000, 21(12): 1837-1839
59. Zhu J J, Liao X H, Chen H Y. Materials Research Bulletin, 2001, 36: 1687-1692
60. Wang C Y, Chen Z Y. Chinese J. Chem. Phys., 2001, 14(3): 350-354
61. Wang C Y, Zhou Y, Zhu Y R, et al. Materials Research Bulletin, 2000, 35: 1463-1468
62. Liu H, Favier F, Ng K, et al. Electrochim. Acta, 2001, 47: 671-677
63. Tang Z Y, Liu S Q, Dong S J, et al. J. Electroanal. Chem., 2001, 502: 146-151
64. Zoval J V, Stiger R M, Biernacki P R, et al. J. Phys. Chem., 1996, 100: 837-844
65. Kwok H N, Liu H, Penner R M. Langmuir, 2000, 16: 4016-4023
66. Stiger R M, Gorer S, Craft B. et al. Langmuir, 1999, 15: 790-798
67. Phull S S, Lorimer J P, Mason T J, et al. Electrochim. Acta, 1996, 41 (17): 2737-2741
68. Reisse J, Francois H, Wandercammen J, et al. Electrochim Acta, 1994, 39: 37-39
69. Durant A, Delplancke J -L, Winand R, et al. Tetrahedron Letters, 1995, 36(24): 4257-4260
70. Delplancke J -L, Dibella V, Reisse J, et al. Ultrason. Sonochem., 1996, 3: S147-S151
71. Socol Y, Abramson O, Gedanken A, et al. Langmuir, 2002, 18: 4736-4740
72. Delplancke J -L, Bouesnard O, Reisse J, et al. Mat. Res. Soc. Symp. Proc., 1997, 451: 383-388
73. Delplancke J -L, Bella V D, Reisse J, et al. Mat. Res. Soc. Symp. Proc., 1995, 372: 75-81
74. Durant A, Delplancke J-L, Libert V, et al. European Journal of Organic Chemistry, 1999: 2845-2851
75. Mastal Y, Polsky R, Koltypin Yu, et al. J. Am. Chem. Soc. , 1999, 121: 10047-10052
76. Zhu J J, Aruna S T, Gedanken A. Chem. Mater., 2000, 12: 143-147
77. Zhu J J, Liu S W, Palchik O, et al. Langmuir, 2000, 16: 6396-6399
78. Zhang Y, Franklin N W, Chen R J, et al, Chem. Phys. Lett., 2000, 331: 35-41
79. Vieu C, Carcenac F, Pepin A, et al. Appl. Surf. Sci., 2000, 164: 111-117
80. Jung T, Schlittler R, Gimzewski J K, et al. Appl. Phys. A, 1995, 61: 467-474
81. Zach M P, Kwokh N, Penner R M. Science, 2002, 290: 2120-2123
82. Walter E C, Kwolh N, Zach M P, et al. Microelectronic Engineering, 2002, 61/62: 555-561
83. Zach M P, Inazu K, Ng K H, et al. Chem. Mater., 2002, 14: 3206-3216
84. LaMer V K, Dinegar R H. J. Am. Chem. Soc., 1950, 72: 4847-4854
85. Favier F, Walter E C, Zach M P, et al. Science, 2001, 293: 2227-2231
86. Penner R M. Adv. Mater., 2000, 12: 878-883
87. Walter E C, Penner R M, Liu H, et al. Surface and Interface Analysis, 2002, 34: 409-412
88. Walter E C, Zach M P, Favier F. Adv. Mater., 2003, 4: 131-138
89. Walter E C, Murray B J, Favier F, et al. J. Phys. Chem. B, 2002, 106(44): 11407-11411
90. Mukhopadhyay I, Freyland W. Langmuir, 2003, 19: 1951-1953
91. Hsu W K, Li J, Terrones H, et al. Chem. Phys. Lett., 1999, 301: 159-166
92. Zheng M H, Gong Z Q, Cheng W G, Electroplating & Finishing, 2001, 20(4): 35-39
93. Zhou X F, Xu D B, He H, et al. Chinese J. Appl. Chem., 2002, 19: 708-710