Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3219-3224

  Ducret, S ^a   Saigne F ^a   Boch, J ^b   Schrimpf, R D ^c   Fleetwood, D M ^c   Vaille, J R ^a   Dusseau, L ^a   David, J P ^d   Ecoffet, R ^e  

^a UNIV MONTPELLIER   (France)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

^c VANDERBILT UNIVERSITY   (United States)

^d ONERA   (France)

^e CNES   (France)

Author keywords

Bipolar; Dose; Dose rate; Enhanced low dose rate sensitivity (ELDRS); ICs; Thermal annealing

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRON IRRADIATION; ELECTRON TRAPS; ELECTROSTATICS; INTEGRATED CIRCUITS; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SILICA;

BIPOLAR; DOSE; DOSE RATE; ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS); THERMAL ANNEALING;

BIPOLAR TRANSISTORS;

EID: 11044232780     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839145     Document Type: Conference Paper

References (16)

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