Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP-based quantum well lasers

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 14, 2004, Pages 3391-3398

  Sweeney, S J ^a   McConville, D ^a   Masse N F ^a   Bouyssou, R X ^a   Adams, A R ^a   Ahmad, C N ^a   Hanke, C ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 10844274820     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405242     Document Type: Conference Paper

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