Highly reliable 1.3-μm InGaAlAs buried heterostructure laser diode for 10GbE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 731-733

  Sato, Hiroshi ^a   Tsuchiya, Tomonobu ^a   Kitatani, Takeshi ^a   Takahashi, Noritsugu ^a   Oouchi, Kiyoshi ^a   Nakahara, Koji ^a   Aoki, Masahiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ELECTRIC CURRENTS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

BURIED-HETEROSTRUCTURE (BH); ETHERNET; MULTIPLE-QUANTUM-WELLS (MQE); OSCILLATION FREQUENCY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 23744495115     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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