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Volumn 211, Issue 1, 1999, Pages 525-531

Dependence of threshold current on QW position and on pressure in 1.5 μm InGaAs(P) lasers

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[No Author keywords available]

Indexed keywords


EID: 0032647040     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<525::AID-PSSB525>3.0.CO;2-W     Document Type: Article
Times cited : (61)

References (10)
  • 9
    • 0003769722 scopus 로고
    • Properties of lattice matched and strained indium gallium arsenide
    • INSPEC
    • V. A. WILKINSON and A. R. ADAMS, Properties of Lattice Matched and Strained Indium Gallium Arsenide, IEE emis Datareviews Series, INSPEC, 1993 (p. 70).
    • (1993) IEE Emis Datareviews Series , pp. 70
    • Wilkinson, V.A.1    Adams, A.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.