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Volumn 223, Issue 2, 2001, Pages 567-572

Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures

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EID: 0035530608     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200101)223:2<567::AID-PSSB567>3.0.CO;2-6     Document Type: Article
Times cited : (24)

References (8)
  • 7
    • 0001018290 scopus 로고    scopus 로고
    • High pressure in semiconductor physics II
    • Academic Press, London
    • A. R. ADAMS, M. SILVER, and J. ALLAM, High Pressure in Semiconductor Physics II, in: Semiconductors and Semimetals, Vol. 55, Academic Press, London 1998.
    • (1998) Semiconductors and Semimetals , vol.55
    • Adams, A.R.1    Silver, M.2    Allam, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.