High-Pressure Studies of Recombination Mechanisms in 1.3-μm GaInNAs Quantum-Well Lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1196-1201

  Jin, S R ^a   Sweeney, Stephen John ^a   Tomić, Stanko ^a   Adams, Alfred R ^a   Riechert, H ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Optical measurement; Quantum well lasers; Semiconductor device measurement; Semiconductor lasers; Spontaneous emission

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; ERROR ANALYSIS; HAMILTONIANS; HYDROSTATIC PRESSURE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SPONTANEOUS EMISSION;

AUGER CURRENT; OPTICAL MEASUREMENTS; SEMICONDUCTOR DEVICE MEASUREMENTS;

QUANTUM WELL LASERS;

EID: 1342303598     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819515     Document Type: Conference Paper

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