W-clad layer formation on heavily doped p+-Si by selective chemical vapor deposition

Journal of the Electrochemical Society

Volumn 145, Issue 12, 1998, Pages 4203-4206

  Ishii, Hiromu ^a   Sato, Yasuhiro ^a   Arita, Yoshinobu ^a,b  

^a NTT CORPORATION   (Japan)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; FLUORINE; REDUCTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SELECTIVE CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 0032293968     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838937     Document Type: Article

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