Improving the characteristics of ultra-thin-film fully-depleted metal-oxide-semiconductor field effect transistors on SIMOX (Separation by IMplanted OXygen) by selective tungsten deposition on source and drain region

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6290-6294

  Sato, Yasuhiro ^a   Kosugi, Toshihiko ^a   Tsuchiya, Toshiaki ^b   Ishii, Hiromu ^a  

^a NTT CORPORATION   (Japan)

^b Dept Electron Contr Syst Eng ^*  (Japan)

Author keywords

CVD; Hot carrier effects; MOSFET; Parasitic bipolar effect; Sheet resistance; SIMOX; W

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HOT CARRIERS; IMPACT IONIZATION; ION IMPLANTATION; OXYGEN; SILICON ON INSULATOR TECHNOLOGY; THIN FILM TRANSISTORS; TUNGSTEN; ULTRATHIN FILMS;

PARASITIC BIPOLAR EFFECT; SEPARATION BY IMPLANTATED OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0032304465     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6290     Document Type: Article

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