300-kilo-gate sea-of-gate type gate arrays fabricated using 0.25-μm-gate ultra-thin-film fully-depleted complementary metal-oxide-semiconductor separation by implanted oxygen (CMOS/SIMOX) technology with tungsten-covered source and drain

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5875-5879

  Sato, Yasuhiro ^a   Kado, Yuichi ^a   Tsuchiya, Toshiaki ^b   Kosugi, Toshihiko ^a   Ishii, Hiromu ^a  

^a NTT CORPORATION   (Japan)

^b SHIMANE UNIVERSITY   (Japan)

Author keywords

CMOS; CVD; Gate array; LSI; Sheet resistance; SIMOX; W

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HYDROGENATION; INTEGRATED CIRCUIT LAYOUT; ION IMPLANTATION; OXYGEN; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THIN FILM DEVICES; ULTRATHIN FILMS;

HYDROGENATION-AND-HYDROGEN-TERMINATION (HHT) TREATMENT; SEA-OF-GATE (SOG) GATE ARRAYS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

LSI CIRCUITS;

EID: 0032206557     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5875     Document Type: Article

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