Ferroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications

Integrated Ferroelectrics

Volumn 61, Issue , 2004, Pages 123-127

  Hu, X B ^a   Garg, A ^a   Wang, J ^a,b   Barber, Z H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Bi4Ti3O12; Ferroelectric; Pulsed laser deposition (PLD); Thin films

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRIC MATERIALS; POLARIZATION; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

BI4 TI3 O12; FERROELECTRIC PROPERTIES; REMANENT POLARIZATION; SWITCHING CYCLES;

THIN FILMS;

EID: 10844279490     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490459026     Document Type: Article

References (5)

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