Fabrication and characterization of (Bi,La)4Ti3O 12 films using LaAlO3 Buffer layers for MFIS structures

Integrated Ferroelectrics

Volumn 62, Issue , 2004, Pages 141-147

  Park, Byung Eun ^a   Ishiwara, Hiroshi ^b  

^a R&D Association for Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(Bi,La)4Ti3O12; LaAlO3; MBD; MFIS structure; Sol gel

Indexed keywords

BISMUTH COMPOUNDS; CAPACITANCE; DEPOSITION; OPTIMIZATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DIODES; SOL-GELS; THIN FILMS; VOLTAGE MEASUREMENT;

(BI,LA)4TI3O12; LAALO3; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTORS (MFIS) STRUCTURES; MOLECULAR BEAM DEPOSITION (MBD);

FERROELECTRIC MATERIALS;

EID: 10844275125     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490456362     Document Type: Article

References (8)

1. B.-E. Park and H. Ishiwara, Appl. Phys. Lett. 79, 806 (2001).
2. B.-E. Park, S. Shouriki, E. Tokumitsu, and H. Ishiwara, Jpn. J. Appl. Phys. 37, 5145 (1998).
3. H. Ishiwara, Mater. Res. Soc. Symp. Proc. 596, 427 (2000).
4. J. H. Takemoto, C. M. Jackson, R. Hu, J. F. Burch, K. P. Daly, and R. W. Simon, IEEE Trans. Magne. 27, 2549 (1991).
5. E. A. Giess, R. L. Sandstrom, W. J. Gallagher, A. Gupta, S. L. Shinde, R. F. Cook, E. I. Cooper, E. J. M. O'Sullivan, J. M. Roldan, A. P. Segmller, and J. Angilello, IBM J. Res. Develop. 34, 916 (1990).
6. B.-E. Park and H. Ishiwara, Integr. Ferroelectr. 40, 201 (2001).
7. B.-E. Park and H. Ishiwara, Appl. Phys. Lett. 82, 1197 (2003).
8. S. E. Cummins and L. E. Wahl, J. Appl. Phys. 39, 2268 (1968).