Intelligent SOI CMOS Integrated Circuits and Sensors for Heterogeneous Environments and Applications

Proceedings of IEEE Sensors

Volumn 1, Issue 2, 2002, Pages 1407-1412

  Flandre, D ^a   Adriaensen, S ^a   Afzalian, A ^a   Laconte, J ^a   Levacq, D ^a   Renaux, C ^a   Vancaillie, L ^a   Raskin, J P ^a   Demeus L ^b   Delatte, P ^b   Dessard, V ^b   Picun, G ^b  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b CISSOID SA   (Belgium)

Author keywords

Aerospace.; Automotive; CMOS; High temperature; Integrated circuits; Micropower; Sensors; SOI

Indexed keywords

AUTOMOTIVE INDUSTRY; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; HIGH TEMPERATURE APPLICATIONS; MATHEMATICAL MODELS; METALLIZING; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

HETEROGENEOUS ENVIRONMENTS;

CHEMICAL SENSORS;

EID: 10744231120     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

1. Afzalian A., et al., "Comparison of Bulk vs SOI for low power low voltage CMOS imager", 2001 IEEE Int. SOI Conf. (Durango CO, Oct. 2001), 134-135.
2. Brusius P., et al., "SOI devices for high temperature applications", 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. XI.3-8, June 1996.
3. Chen J., et al, "Comparison of TiSi2, CoSi2 and NiSi for thin-film Silicon-on-Insulator applications", Journal of Electrochemical Society, 144 (1997) 2437-2442.
4. Demeûs L., et al., "Advanced SOI CMOS technology for RF applications", URSI Int. Symp. on Signals, Systems and Electron. (Pisa, Italy, Oct. 1998) 134-139.
5. Demeûs L., et al., "Integrated sensor and electronic circuits in fully-depleted SOI technology for high-temperature applications", IEEE Trans. on Industrial electronics, 48 (2001) 272-280.
6. Dessard V., et al, "Ultra-Low Power High-Temperature Voltage Reference Using Standard SOI CMOS Process", Proc. HTTEN Conf. (Oslo, Norway, June 2001).
7. Estrada M., et al., "FD MOS SOI circuit to improve the threshold of detection of a co-integrated amorphous photodiode", Iberchip workshop (Mexico, April 2002).
8. Flandre D., "Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits", in the book "High-temperature electronics", IEEE Press, Ed. R. Kirschman, 1998, 303-308.
9. Flandre D., et al., "Fully-depleted SOI CMOS technology for low-voltage low-power mixed digital/analog/microwave circuits", Analog Integrated Circuits and Signal Processing, 21 (1999) 213-228.
10. Flandre D., et al., "Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems", Solid-State Electronics, 45 (2001) 541-549.
11. Gentinne B., et al., "Fully-depleted SOI-CMOS technology for high temperature IC applications", Materials Science and Enginneering - B, 46 (1997) 1-7.
12. Laconte J., et al, "SOI CMOS Compatible Low-Power Microheater optimization and fabrication for smart gas sensor implementations", IEEE Sensors 2002.
13. Picún G., et al., "Characterization of thin-film SOI split-drain MOS transistors as magnetic sensors", Electrochemical Society Proc. Volume 2001-3 (Washington DC, March 25-29 2001) 289-294.
14. th IEEE Int. Conf. on Emerging Technologies and Factory Automation (Antibes, France, Oct. 15-18, 2001), 733-736.
15. Raskin J.-P., et al., "Synthetic microwave inductors in SOI technology", IEEE Int. SOI Conf., Fish Camp, California, Oct. 6-9, 1997, pp. 90-91.
16. Raskin J.-P., et al., "Substrate Crosstalk reduction using SOI technology", IEEE Trans, on Electron Devices, vol. 44, no. 12, pp. 2252-2261, Dec.
17. Silveira F., Flandre D., "A 110 nA pacemaker sensing channel in CMOS on Silicon-on-Insulator", ISCAS 2002, June 2002.