2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3556-3560

  Schmidt, D C ^a,d   Svensson, B G ^a   Lindstrom J L ^b   Godey, S ^c   Ntsoenzok, E ^c   Barbot, J F ^d   Blanchard, C ^d  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c Centre National de la Recherche Scientifique   (France)

^d UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001691977     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369773     Document Type: Article

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