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Volumn 49, Issue 3, 2002, Pages 526-528

Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors

Author keywords

Capacitance voltage (C V); Interface states; MOS capacitor; Photonic characterization; Traps

Indexed keywords

ELECTRIC CHARGE; INTERFACES (MATERIALS); PHOTONS; POLYSILICON;

EID: 0036494611     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987127     Document Type: Article
Times cited : (31)

References (12)
  • 4
    • 0016081559 scopus 로고
    • Deep level transient spectroscopy: A new method to characterize traps in semiconductors
    • July
    • (1974) J. Appl. Phys. , vol.45 , pp. 3023-3032
    • Lang, D.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.