Sub-bandgap photonic gated-diode method for extracting distributions of interface states in MOSFETs

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1761-1763

  Chi, S S ^a   Kim, H T ^b   Kim, M S ^b   Kim, T E ^b   Shin, H T ^b   Park, H S ^b   Kim, K H ^b   Kim, K S ^b   Nam, I C ^b   Kim, D J ^b   Min, K S ^b   Kang, D W ^b   Kim, D M ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; GATES (TRANSISTOR); INTERFACES (MATERIALS); PHOTONS; SEMICONDUCTOR DIODES; SILICA; SILICON;

INTERFACE STATES; PHOTORESPONSIVE ENERGY BAND; SUB-BANDGAP PHOTONIC GATED DIODE;

MOSFET DEVICES;

EID: 0344272245     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031080     Document Type: Article

References (7)

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