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Volumn 56, Issue 5, 2002, Pages 861-866

Study on ferroelectric and dielectric properties of niobium doped Bi4Ti3O12 ceramics and thin films prepared by PLD method

Author keywords

Ceramics; Dielectric; Doping; Fatigue; Ferroelectric; PLD; Thin films

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); FATIGUE OF MATERIALS; FERROELECTRICITY; NIOBIUM; PERMITTIVITY; PULSED LASER DEPOSITION; THIN FILMS;

EID: 0036828989     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(02)00628-6     Document Type: Article
Times cited : (52)

References (10)
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    • Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory
    • Gopalan S., Wong C.H., Balu V., Lee J.H., Han J.H., Mohammedali R., Lee J.C. Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory. Appl. Phys. Lett. 75(14):1999;2123-2125.
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    • Preparation of bismuth titanate thin films by laser ablation
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  • 10
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    • Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.