Physical modeling of Fermi-level effects for decanano device process simulations

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 284-289

  Martin Bragado, I ^a   Pinacho, R ^a   Castrillo, P ^a   Jaraiz, M ^a   Rubio, J E ^a   Barbolla, J ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Diffusion; Fermi level; Monte Carlo; Silicon; Simulator

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); MONTE CARLO METHODS; PARAMETER ESTIMATION;

CHARGE REACTIONS; ELECTRIC BIAS; ELECTRICAL COMPENSATION; MONTE CARLO;

FERMI LEVEL;

EID: 10644274392     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.042     Document Type: Conference Paper

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