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Applied Physics Letters

Volumn 84, Issue 3, 2004, Pages 368-370

Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys

(4) Eguchi, S a Chleirigh, C N b Olubuyide, O O b Hoyt, J L b

a RENESAS TECHNOLOGY CORP (Japan)

b Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN JUNCTIONS; TRANSIENT DIFFUSION;

ARSENIC; CARRIER CONCENTRATION; COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION; ELECTRIC CHARGE; ION IMPLANTATION; MATHEMATICAL MODELS; MOSFET DEVICES; PHASE EQUILIBRIA; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

BINARY ALLOYS;

EID: 1242287927 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1641169 Document Type: Article

Times cited : (18)

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