(Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 433-436

  Damilano, B ^a   Barjon, J ^a   Wan, S W ^a   Duboz, J Y ^a   Leroux, M ^a   Laugt M ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SHORT CIRCUIT CURRENTS; SPECTRUM ANALYSIS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION; OPEN CIRCUIT VOLTAGE; SPECTRAL RESPONSE;

SOLAR CELLS;

EID: 10644260482     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040890     Document Type: Article

References (13)

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