메뉴 건너뛰기




Volumn 2000-January, Issue , 2000, Pages 998-1001

Next-generation, high-efficiency III-V multijunction solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); SOLAR CELLS; TUNNEL JUNCTIONS;

EID: 84856510464     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916054     Document Type: Conference Paper
Times cited : (84)

References (17)
  • 6
    • 0031361244 scopus 로고    scopus 로고
    • Projected performance of three- and four-junction devices using GaAs and GalnP
    • S. R. Kurtz, D. Myers, J. M. Olson, "Projected Performance of Three- and Four-Junction Devices Using GaAs and GalnP," Proc. 26th IEEE PVSC (1997), p. 875.
    • (1997) Proc. 26th IEEE PVSC , pp. 875
    • Kurtz, S.R.1    Myers, D.2    Olson, J.M.3
  • 7
    • 0010273857 scopus 로고    scopus 로고
    • 1-eV GalnNAs solar cells for ultrahigh-efficiency multijunction devices
    • D.J. Friedman et al., "1-eV GalnNAs Solar Cells for Ultrahigh-Efficiency Multijunction Devices," 2nd World Conf. on PV Energy Cow. (1998).
    • (1998) 2nd World Conf. on PV Energy Cow
    • Friedman, D.J.1
  • 8
    • 0010048039 scopus 로고    scopus 로고
    • InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
    • Feb.
    • Steven Kurtz et al., "InGaAsN Solar Cells with 1.0 eV Band Gap, Lattice Matched to GaAs," Appl. Phys. Lett., Feb. 1999, p. 729.
    • (1999) Appl. Phys. Lett. , pp. 729
    • Kurtz, S.1
  • 9
    • 84949546943 scopus 로고    scopus 로고
    • Modeling of electron diffusion length in GalnAsN solar cells
    • to be publ.
    • Sarah Kurtz et al., "Modeling of Electron Diffusion Length in GalnAsN Solar Cells," to be publ. Proc. 28th IEEE PVSC (2000).
    • (2000) Proc. 28th IEEE PVSC
    • Kurtz, S.1
  • 15
    • 0027640096 scopus 로고
    • AIGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
    • D. Jung, C. Parker, J. Ramdani, and S. Bedair, "AIGaAs/GaInP heterojunction tunnel diode for cascade solar cell application," J. Appl. Phys., Vol. 74, No. 3, p. 2090, 1993.
    • (1993) J. Appl. Phys. , vol.74 , Issue.3 , pp. 2090
    • Jung, D.1    Parker, C.2    Ramdani, J.3    Bedair, S.4
  • 16
    • 0033909037 scopus 로고    scopus 로고
    • 1-xAs layers for AIGaAs/GaAs interband tunneling devices
    • Jan.
    • 1-xAs Layers for AIGaAs/GaAs Interband Tunneling Devices," J. Elec. Matl., Vol. 29, Jan. 2000, p. 47.
    • (2000) J. Elec. Matl. , vol.29 , pp. 47
    • Dimroth, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.