Pulling the plug on current drain

IEEE Circuits and Devices Magazine

Volumn 20, Issue 6, 2004, Pages 12-16

  Franz, Roger L ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; ENERGY EFFICIENCY; INTELLIGENT MATERIALS; LEAKAGE CURRENTS; LSI CIRCUITS; SEMICONDUCTOR MATERIALS; SWITCHING CIRCUITS;

LEAKAGE CONTROL; STANDBY LEAKAGE; THRESHOLD SWITCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 10644243592     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2004.1364770     Document Type: Article

References (46)

1. European Commission (June 15, 2000). Code of conduct on efficiency of external power supplies [Online]. Available: http://energyefficiency. jrc.cec.eu.int/pdf/COC_PSfinal_v6june2000.pdf
2. The International Technology Roadmap for Semiconductors Web site [Online]. Available: http://public.itrs.net
3. M. Alam, B. Weir, and P. Silverman, "A future of function or failure?" IEEE Circuits Devices Mag., vol. 18, pp. 42-48, Mar. 2002.
4. N. Yang, W.K. Henson, and J.J. Wortman, "A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with Sub-2-nm Gate Oxides," IEEE Trans. Electron Devices, vol. 47, pp. 1636-1644, Aug. 2000.
5. J. Tschanz, S. Narendra, Y. Ye, B. Bloechel, S. Borkar, and V. De, "Dynamic-sleep transistor and body bias for active leakage power control of microprocessors," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2003, vol. 1, pp. 102-111
6. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1982, pp. 638-644
7. A. Wacker and E. Scholl, "Criteria for stability in bistable electrical devices with S- or Z-shaped current voltage characteristic," J. Appl. Phys., vol. 78, no. 12, pp. 7352-7357, 1995.
8. J.K. Moser, "Bistable systems of differential equations with applications to tunnel diode circuits," IBM J., pp. 226-240, July 1961.
9. M. Gill, T. Lowrey, and J. Park, "Ovonic unified memory - A high-performance nonvolatile memory technology for stand-alone memory and embedded applications," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2002, vol. 1, pp. 202-205.
10. S. Ovshinsky, "Symmetrical current controlling device," U.S. Patent 3 271 591, 1966 (and subsequent patents licensed to Energy Conversion Devices, Inc.).
11. S.R. Ovshinsky, "Reversible electrical switching phenomena in disordered structures," Phys. Rev. Lett., vol. 21, no. 20, pp. 1450-1453, 1968.
12. D. Adler, M.S. Shur, M. Silver, and S.R. Ovshinsky, "Threshold switching in chalcogenide-glass thin films," J. Appl. Phys., vol. 51, no. 6, pp. 3269-3309, 1980.
13. A.E. Owen and J.M. Robertson, "Electronic conduction and switching in chalcogenide glasses," IEEE Trans. Electron Devices, vol. 20, pp. 105-122, Feb. 1973.
14. D. Adler, "Amorphous-semiconductor devices," Sci. Amer., vol. 236, pp. 36-49, May 1977.
15. N. Mott (Dec. 8, 1977). Electrons in glass (Nobel lecture) [Online]. Available: http://nobelprize.org/physics/laureates/1977/mott-lecture.pdf
16. G. Wicker, "A comprehensive model of submicron chalcogenide switching devices," Ph.D. dissertation, Dept. Electr. Eng., Wayne State University, Detroit, MI, 1996.
17. S. Prakash, S. Asokan, and D.B. Ghare, "A guideline for designing chalcogenide-based glasses for threshold switching characteristics," IEEE Electron Device Lett., vol. 18, pp. 45-47, Feb. 1997.
18. T. Sakamoto, H. Sunamura, and H. Kawaura, "Nanometer-scale switches using copper sulfide," Appl. Phys. Lett., vol. 82, no. 18, pp. 3032-3034, 2003.
19. T.C.L.G. Sollner, W.D. Goodhue, P.E. Tannenwald, C.D. Parker, and D.D. Peck, "Resonant tunneling through quantum wells at frequencies up to 2.5 THz," Appl. Phys. Lett., vol. 43, no. 6, pp. 588-590, 1983.
20. P.M. Mensz, P.A. Garbinski, A.Y. Cho, D.L. Sivco, and S. Luryi, " High transconductance and large peak-to-valley ratio of negative differential conductance in three-terminal InGaAs/InAlAs real-space transfer devices," Appl. Phys. Lett., vol. 57, no. 24, pp. 2558-2560, 1990.
21. +-InGaAs/GaAs doped-channel structure," Appl. Phys. Lett. vol. 67, no. 3, pp. 404-406, 1995.
22. J.J. Ojha, J.G. Simmons, R.S. Mand, and A.J SpringThorpe, " Realization of an n-channel GaAs/AlGaAs Bistable Field-Effect Transistor (BISFET)," IEEE Electron Device Lett., vol. 14, pp. 385-387, Aug. 1993.
23. A. Wacker and E. Scholl, "Oscillatory instability in the heterostructure hot-electron diode," Appl. Phys. Lett., vol. 59, no. 14, pp. 1702-1704, 1991.
24. J.C. Wu, M.N. Wybourne, C. Berven, S.M Goodnick, and D.D. Smith, "Negative differential conductance observed in a lateral double constriction cevice," Appl. Phys. Lett., vol. 61, no. 20, pp. 2425-2427, 1992.
25. C-K Song and D-H Kim, "Observation of the bistable current-voltage chartacteristics in the highly doped multi-quantum well heterostructure," IEEE Elecron. Device Lett., vol. 20, pp. 451-453, Sept. 1999.
26. J. Kastrup, H.T. Grahn, K. Ploog, F. Prengel, A. Wacker, and E. Scholl, "Multistability of the current-voltage characteristics in doped GaAs-AlAs superlattices," Appl. Phys. Lett., vol. 65, no. 14, pp. 1808-1810, 1994.
27. Z.C. Huang, R. Goldberg, J.C. Chen, Y. Zheng, D.B. Mott, and P. Shu, "Direct observation of transferred-electron effect in GaN," Appl. Phys. Lett., vol. 67, no. 19, pp. 2825-2826, 1995.
28. J. McGinness, P. Corry, and P. Proctor, "Amorphous semiconductor switching in melanins," Science, vol. 183, pp. 853-854, Mar. 1, 1974.
29. A.J. Heeger, A.G. MacDiarmid, and H. Shirakawa (Oct. 10, 2000). "How can plastic become conductive? (The Nobel Prize in Chemistry 2000 - Information for the Public) [Online]. Available: http://nobelprize.org/ chemistry/laureates/2000/public.html
30. H.K. Henisch and W.R. Smith, "Switching in organic polymer films," Appl. Phys. Lett., vol. 24, no. 12, pp. 589-591, 1974.
31. R.S. Potember, T.O. Poehler, and D.O. Cowan, "Electrical switching and memory phenomena in Cu-TCNQ thin films," Appl. Phys. Lett., vol. 34, no. 6, pp. 405-407, 1979.
32. V. Chellappa and B.Z. Jang, "Anomalous electrical and optical properties of polymeric carbons," Appl. Phys. Lett., vol. 66, no. 15, pp. 1951-1953, 1995.
33. J. Chen, W. Wang, M.A. Reed, A.M. Rawlett, D.W. Price, and J.M. Tour, "Room-temperature negative differential resistance in nanoscale molecular junctions," Appl. Phys. Lett., vol. 77, no. 8, pp. 1224-1226, 2000.
34. B. Larade, J. Taylor, H. Mehrez, and H. Guo, "Conductance, I-V curves, and negative differential resistance of carbon atomic wires," Phys. Rev. B, vol. 64, article 07520, July 2001.
35. L.P. Ma, J. Liu, and Y. Yang, "Organic electrical bistable devices and rewritable memory cells," Appl. Phys. Lett., vol. 80, no. 16, pp. 2997-2999, 2002.
36. M.E. Itkis, X. Chi, A.W. Cordes, and R.C. Haddon, "Magneto-opto-electronic Bistability in a Phenalenyl-based Neutral Radical," Science, vol. 296, no. 5572, pp. 1443-1445, 2002.
37. A. Bandyopadhyay and A.J. Pal, "Large conductance switching and memory effects in organic molecules for data-storage applications," Appl. Phys. Lett., vol. 82, no. 8, pp. 1215-1217, 2003.
38. W. den Boer, "Threshold switching in hydrogenated amorphous silicon," Appl. Phys. Lett., vol. 40, no. 9, pp. 812-813, 1982.
39. A.E. Owen, P.G. Le Comber, W.E. Spear, and J. Hajto, "Memory switching in amorphous silicon devices," J. Non-Cryst. Sol., vol. 59-60, pp. 1273-1280, Dec. 1983.
40. J.E. Mahan, "Threshold and memory switching in polycrystalline silicon," Appl. Phys. Lett, vol. 41, no. 5, pp. 479-481, 1982.
41. A. Al-Bustani, "Switching characteristics of multigrain (Polycrystalline Silicon) barrier devices," IEEE Trans. Electron Devices, vol. 38, pp. 2092-2100, Sept. 1991.
42. S.J. Koester, K. Ismail, K.Y. Lee, and J.O. Chu, "Operation of a novel negative differential conductance transistor fabricated in a strained si quantum well," IEEE Electron Device Lett., vol. 18, pp. 423-444, Sept. 1997.
43. P.E. Thompson, K.D. Hobart, M.E. Twigg, G.G. Jernigan, T.E. Dillon, S.L. Rommel, P.R. Berger, D.S. Simons, P.H. Chi, R. Lake, and A.C. Seabaugh, "Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy," Appl. Phys. Lett., vol. 75, no. 9, pp. 1308-1310, 1999.
44. A. Beck, J.G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol. 77, no. 1, pp. 139-141, 2000.
45. R. Duane, A. Mathewson, and A. Concannon, "Bistable gated bipolar device," IEEE Electron Device Lett., vol. 24, pp. 661-663, Oct. 2003.
46. 0.5/Si resonant interband tunneling diodes," Appl. Phys. Lett. vol. 73, no. 15, pp. 2191-2193, 1998.