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Volumn 20, Issue 9, 1999, Pages 451-453

Observation of the bistable current-voltage characteristics in the highly doped multi-quantum well heterostructure

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; HETEROJUNCTIONS; IMPACT IONIZATION; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

EID: 0032595857     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784449     Document Type: Article
Times cited : (1)

References (9)
  • 2
    • 0032186896 scopus 로고    scopus 로고
    • Gate current model for the hot-electron regime of operation in heterostructure field effect transistors
    • Oct.
    • E. J. Martinez, M. S. Shur, and F. L. Schuermeyer, "Gate current model for the hot-electron regime of operation in heterostructure field effect transistors," IEEE Trans. Electron Devices, vol. 45, p. 2108, Oct. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 2108
    • Martinez, E.J.1    Shur, M.S.2    Schuermeyer, F.L.3
  • 3
    • 0020114078 scopus 로고
    • Band-gap engineering via graded gap, superlattice, and periodic doping structures: Application to novel photodetectors and other devices
    • F. Capasso, "Band-gap engineering via graded gap, superlattice, and periodic doping structures: Application to novel photodetectors and other devices," J. Vac. Sci. Technol. B, vol. 1, no. 2, p. 457, 1983.
    • (1983) J. Vac. Sci. Technol. B , vol.1 , Issue.2 , pp. 457
    • Capasso, F.1
  • 4
    • 0002528786 scopus 로고
    • Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
    • F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams, "Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio," Appl. Phys. Lett., vol. 40, no. 1, p. 38, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , Issue.1 , pp. 38
    • Capasso, F.1    Tsang, W.T.2    Hutchinson, A.L.3    Williams, G.F.4
  • 5
    • 0029408178 scopus 로고
    • Electron transfer between two coupled quantum wells in a resonant tunneling diode structure
    • P. Mounaix, J. M. Libberecht, and D. Lippens, "Electron transfer between two coupled quantum wells in a resonant tunneling diode structure," Solid-State Electron., vol. 38, no. 11, p. 1904, 1995.
    • (1995) Solid-State Electron. , vol.38 , Issue.11 , pp. 1904
    • Mounaix, P.1    Libberecht, J.M.2    Lippens, D.3
  • 6
    • 21544470520 scopus 로고
    • New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band-edge discontinuity
    • F. Capasso, J. Allam, A. Y. Cho, K. Mohammed, R. J. Malik, A. L. Hutchinson, and D. Sivco, "New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band-edge discontinuity," Appl. Phys. Lett., vol. 48, no. 19, p. 1294, 1986.
    • (1986) Appl. Phys. Lett. , vol.48 , Issue.19 , pp. 1294
    • Capasso, F.1    Allam, J.2    Cho, A.Y.3    Mohammed, K.4    Malik, R.J.5    Hutchinson, A.L.6    Sivco, D.7
  • 7
    • 0000831633 scopus 로고
    • Impact ionization across the conduction-band-edge discontinuity of quantum well heterostructures
    • S. L. Chuang and K. Hess, "Impact ionization across the conduction-band-edge discontinuity of quantum well heterostructures," J. Appl. Phys., vol. 59, p. 2885, 1986.
    • (1986) J. Appl. Phys. , vol.59 , pp. 2885
    • Chuang, S.L.1    Hess, K.2
  • 8
    • 0012085742 scopus 로고
    • Mechanism of an S-shaped current-voltage characteristic in a multilayer isotype GaAs-AlGaAs heterostructure
    • Zh. I. Aalferoz, O. A. Merzin, M. A. Sinitsyn, S. I. Troshkov, and B. S. Yavich, "Mechanism of an S-shaped current-voltage characteristic in a multilayer isotype GaAs-AlGaAs heterostructure," Sov. Phys. Semicond., vol. 21, p. 304, 1987.
    • (1987) Sov. Phys. Semicond. , vol.21 , pp. 304
    • Aalferoz, Zh.I.1    Merzin, O.A.2    Sinitsyn, M.A.3    Troshkov, S.I.4    Yavich, B.S.5
  • 9
    • 23544450144 scopus 로고
    • Chaotic to periodic spontaneous pulsing in current driven silicon p-i-n strucutres
    • A. G. U. Perera and S. G. Matsik, "Chaotic to periodic spontaneous pulsing in current driven silicon p-i-n strucutres," Physica D, vol. 84, p. 615, 1995.
    • (1995) Physica D , vol.84 , pp. 615
    • Perera, A.G.U.1    Matsik, S.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.