Mutual passivation effects in highly mismatched group III-V-N alloys

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 460-464

  Wu, J ^a   Yu, K M ^a   Walukiewicz, W ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTODIODES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

FREE ELECTRON CONCENTRATION; HIGHLY MISMATCHED ALLOYS; MUTUAL PASSIVATION EFFECTS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 10644231864     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040933     Document Type: Article

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