Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

Journal of Crystal Growth

Volumn 273, Issue 3-4, 2005, Pages 594-602

  Sazaki, Gen ^a,b   Fujino, Takuho ^a   Usami, Noritaka ^a   Ujihara, Toru ^a   Fujiwara, Kozo ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Control of grain orientation; A1. Epitaxial structure; A3. Hydrogen terminated Si(1 1 1); A3. Molecular beam epitaxy; B2. Organic semiconductor; B2. PTCDA

Indexed keywords

ATOMIC FORCE MICROSCOPY; COALESCENCE; HYDROGEN; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THIN FILMS;

CONTROL OF GRAIN ORIENTATION; EPITAXIAL STRUCTURES; HYDROGEN-TERMINATED SI(111);

EPITAXIAL GROWTH;

EID: 10644229200     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.082     Document Type: Article

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