Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(1 1 1) substrate

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 196-201

  Sazaki, Gen ^a,b   Fujino, Takuho ^a   Sadowski, Jerzy T ^a   Usami, Noritaka ^a   Ujihara, Toru ^a   Fujiwara, Kozo ^a   Takahashi, Yukio ^a   Matsubara, Eiichiro ^a   Sakurai, Toshio ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Epitaxial structure; A3. Hydrogen terminated Si(1 1 1); A3. Molecular beam epitaxy; B2. Organic semiconductor; B2. PTCDA

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; ENERGY GAP; INTERFACIAL ENERGY; MOLECULAR BEAM EPITAXY; QUARTZ; SCANNING ELECTRON MICROSCOPY; SURFACE TOPOGRAPHY; TENSILE STRENGTH; THIN FILMS; VECTORS; X RAY DIFFRACTION;

EPITAXIAL STRUCTURES; HYDROGEN-TERMINATED SI(1 1 1 ); ORGANIC SEMICONDUCTOR; PERYLENE-3.4.9.10-TETRACARBOXYLIC DIANHYDRIDES (PTCDA);

CRYSTAL GROWTH;

EID: 0842330018     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.080     Document Type: Article

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