SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18 O implantation

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 504-507

  Hayashi, S ^a   Sasaki, T ^b   Kawamura, K ^b   Matsumura, A ^b   Yanagihara, K ^a   Tanaka, K ^a  

^a NIPPON STEEL CORPORATION   (Japan)

^b Wacker NSCE Corporation   (Japan)

Author keywords

Buried oxide; Deal Grove theory; Diffusion; Ion implantation; ITOX; SIMOX

Indexed keywords

DIFFUSION; HIGH TEMPERATURE EFFECTS; INTERNAL OXIDATION; ION IMPLANTATION; RAPID THERMAL ANNEALING; SILICON WAFERS; SUBSTRATES;

THERMAL OXIDE LAYERS;

OXYGEN;

EID: 12244249832     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00877-2     Document Type: Conference Paper

References (2)

1. K. Tokiguchi, Y. Yamashita, T. Seki, I. Hashimoto, in: Proceedings of the ECS International Symposium on SOI Technology and Devices, 1996, Paris, France, pp. 28-33.
2. Li Y., Kilner J.A., Chater R.J., Nejim A., Hemment P.L.F., Marsh S.D., Booker G.R. Appl. Phys. Lett. 63:1993;2812.