|
Volumn 23, Issue 1, 2003, Pages 45-48
|
The role of a top oxide layer in cavities formed by MeV He implantation into Si
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
COMPUTER SIMULATION;
POINT DEFECTS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON;
STACKING FAULTS;
TEMPERATURE;
TRANSMISSION ELECTRON MICROSCOPY;
CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;
DISLOCATION LOOPS;
HELIUM IMPLANTATION;
ION IMPLANTATION;
|
EID: 0038447240
PISSN: 12860042
EISSN: None
Source Type: Journal
DOI: 10.1051/epjap:2003038 Document Type: Article |
Times cited : (10)
|
References (16)
|