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Volumn 23, Issue 1, 2003, Pages 45-48

The role of a top oxide layer in cavities formed by MeV He implantation into Si

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; STACKING FAULTS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0038447240     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2003038     Document Type: Article
Times cited : (10)

References (16)
  • 12
    • 85039659770 scopus 로고    scopus 로고
    • Ph.D. Thesis, University of Orléans, France
    • S. Godey, Ph.D. Thesis, University of Orléans, France, 1999
    • (1999)
    • Godey, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.