High efficiency and low voltage p-i-n electrophosphorescent OLEDs with double-doping emission layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5464, Issue , 2004, Pages 26-31

  He, Gufeng ^a   Gebeyehu, Desta ^a   Werner, Ansgar ^a   Pfeiffer, Martin ^a   Leo, Karl ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); PHOSPHORESCENCE; QUANTUM EFFICIENCY;

DOPED CHARGE TRANSPORT LAYER; DOUBLE EMISSION LAYERS (DEML); HIGH EFFICIENCY; LOW OPERATING VOLTAGE; P-I-N STRUCTURE; PHOSPHORESCENT ORGANIC LIGHT-EMITTING DIODES (OLED);

LIGHT EMITTING DIODES;

EID: 10044298516     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.546729     Document Type: Conference Paper

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