Negative bias temperature instability of deep sub-micron p-MOSFETs under pulsed bias stress

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 125-129

  Zhu, B ^a   Suehle, J S ^b   Chen, Y ^c   Bemstein, J B ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

Frequency dependence; Negative bias temperature instability; P MOSFET

Indexed keywords

MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; OXIDE FILMS; THERMODYNAMIC STABILITY;

BIAS STRESS; DEEP SUB-MICRON; DEEP-SUB MICRONS; FREQUENCIES DEPENDENCE; INTERFACE TRAP GENERATION; P-MOSFETS; PMOSFET; POSITIVE BIAS TEMPERATURE INSTABILITIES; PULSED BIAS; THICK OXIDE FILMS;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 3042514302     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194248     Document Type: Conference Paper

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