Theoretical studies on defects in SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 279-282

  Deak P ^a   Gali, A ^a   Miro, J ^a   Guiterrez, R ^b   Sieck, A ^b   Frauenheim, Th ^b  

^a TU Institute of Building Constructions and Sanitary Engineering Budapest   (Hungary)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Electronic Structure; Intrinsic Defects; Nitrogen; Oxygen; Stability

Indexed keywords

ARSENIC; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; ELECTRONIC STRUCTURE; LASER DOPPLER VELOCIMETERS; NITROGEN; OXYGEN; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

INTRINSIC DEFECTS; MOLECULAR CLUSTER MODELS;

SILICON CARBIDE;

EID: 0031700728     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.279     Document Type: Article

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