Role of interfacial-charge in the growth of GaN on α-SiC

Journal of Electronic Materials

Volumn 26, Issue 4, 1997, Pages 341-346

  Ren, Shang Yuan ^a,b   Dow, John D ^b  

^a PEKING UNIVERSITY   (China)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

6H SiC; GaN; Substrate

Indexed keywords

FILM GROWTH; INTERFACES (MATERIALS); OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SILICON CARBIDE; X RAY SPECTROSCOPY;

ALUMINUM NITRIDE; ELECTRONEGATIVITY ARGUMENTS; GALLIUM NITRIDE; LATTICE MISMATCH;

SEMICONDUCTING FILMS;

EID: 0031125025     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0098-4     Document Type: Article

References (26)

1. R. Dingle, K.L. Shaklee, R.F. Leheny and R.B. Zetterstrom, Appl. Phys. Lett. 19, 5 (1971).
2. Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17a, Semiconductors: Physics of Group IV and III-V Compounds, eds. O. Madelung, M. Schulz and H. Weiss (Berlin: Springer-Verlag, 1982).
3. H.M. Manesevit, F.M. Erdmann and W.I. Simpson, J. Electrochem. Soc. 118, 1864 (1971).
4. B.B. Kosicki and D. Kahng, J. Vac. Sci. Tech. 6, 593 (1969).
5. J.S. Hwang, A.V. Kuznetsov, S.S. Lee, H.S. Kim, J.G. Choi and P.J. Chong, J. Cryst. Growth 142, 5 (1994).
6. T. Sasaki and T. Matsuoka, J. Appl. Phys. 64, 4531 (1988).
7. K. Doverspike, L.B. Rowland, D.K. Gaskill and J.A. Freitas, Jr., J. Electron. Mater. 24, 269 (1995).
8. M.E. Lin, B. Sverdlov, G.L. Zhou and H. Morkoç, Appl. Phys. Lett. 62, 3479 (1993).
9. C.J. Sun, P. Kung, A Saxier, H. Ohsato, E. Bigan, M. Razeghi and D.K. Gaskill, J.Appl.Phys. 76, 236 (1994); 24, 269 (1995).
10. C.J. Sun, P. Kung, A Saxier, H. Ohsato, E. Bigan, M. Razeghi and D.K. Gaskill, J.Appl.Phys. 76, 236 (1994); 24, 269 (1995).
11. Of course, on the atomic scale there will be different local strains created by the C- and Si-terminated interfaces, but these strain fields will die out rapidly with distance from the interface.
12. T. Sasaki and T. Matsuoka, J. Appl. Phys. 61, 2533 (1987).
13. R.B. Capaz, H. Lim and J.D. Joannopoulos, Phys. Rev. B 51, 17755 (1995).
14. J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
15. F.C. Frank, Proc. Symp. on the Plastic Deformation of Crystalline Solids, (Pittsburgh, PA: Carnegie Institute of Technology, 1950), p. 89.
16. J.P. Hirth, Relation Between Structure and Strength in Metals and Alloys, (London: H.M. Stationery Office, 1963), p. 218.
17. L. Pauling, The Nature of the Chemical Bond, 3rd ed., (New York: Cornell University Press, 1960), Chap. 2.
18. Z. Sitar, L.L. Smith and R.F. Davis, J. Cryst. Growth 141, 11 (1994).
19. A conservative upper bound to the magnitude of the difference is ≈0.1 |e|.
20. S.Y. Ren and J.D. Dow, unpublished. Persons interested in obtaining a copy of the computer code should contact S.Y. Ren in Beijing.
21. Similar but different superlattice Hamiltonians have been discussed in S.Y. Ren and J. D. Dow, Phys. Rev. B 39, 7796 (1989); J. Appl. Phys. 65, 1987 (1989).
22. Similar but different superlattice Hamiltonians have been discussed in S.Y. Ren and J. D. Dow, Phys. Rev. B 39, 7796 (1989); J. Appl. Phys. 65, 1987 (1989).
23. F. Herman and S. Skillman, Atomic Structure Calculations, (Englewood Cliffs: Prentice-Hall, 1963).
24. -2, where d is the nearest-neighbor bond length, and we have A = 0.51 x (Harrison's interatomic matrix-elements), found on p. 551.
25. J.A. Dean, Lange's Handbook of Chemistry, 14th ed. (New York: McGraw-Hill, 1992).
26. L.D. Landau and E.M. Lifshitz, Theory of Elasticity, third ed. (Oxford: Pergamon, 1986).