Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique

IEEE Electron Device Letters

Volumn 23, Issue 1, 2002, Pages 28-30

  Hong, Chao Chi ^b   Chang, Chang Yun ^b   Lee, Chaung Yuan ^b   Hwu, Jenn Gwo ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Leakage current density; Low temperature oxidation; MOS device; Repeated spike oxidation

Indexed keywords

SPIKE OXIDATION; THIN-GATE OXIDES;

CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRON TRAPS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; MOS DEVICES; OXIDATION;

GATES (TRANSISTOR);

EID: 0036165638     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.974802     Document Type: Article

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