Improvement in oxide thickness uniformity by repeated spike oxidation

IEEE Transactions on Semiconductor Manufacturing

Volumn 14, Issue 3, 2001, Pages 227-230

  Hong, Chao Chi ^b   Lee, Chuang Yuan ^b   Hsieh, Yuan Long ^b   Liu, Chean Chung ^b   Fong, I Kong ^b   Hwu, Jenn Gwo ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Oxide thickness uniformity; Repeated spike oxidation; RTP

Indexed keywords

OXIDE THICKNESS; RADIATION HEAT ABSORPTION RATE; RAPID THERMAL PROCESSING SYSTEM; REPEATED SPIKE OXIDATION;

COMPUTER SIMULATION; HEAT CONDUCTION; HEAT CONVECTION; RADIATION; RAPID THERMAL ANNEALING; SILICON WAFERS; TEMPERATURE DISTRIBUTION;

OXIDATION;

EID: 0035423123     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.939819     Document Type: Article

References (12)

1. Study of the thermal analysis and the improvement in thickness uniformity of rapid thermal oxides
2. Development of hexagonal-shaped rapid thermal processor using a vertical tube
3. Combined simulation and measurement study of temperature uniformity in rapid thermal processing
4. Thermal modeling of a wafer in a rapid thermal processor
5. Temperature uniformity in RTP furnace
6. The potential effect of multilayer patterns on temperature uniformity during rapid thermal processing
7. Gas flow patterns and thermal uniformity in rapid thermal processing equipment
8. Gas flow engineering in rapid thermal processing
9. The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides
10. 2 by "spike" rapid thermal oxidation
11. CMOS device technology toward 50 nm region
12. A 1.2 V, sub-0.09 μm gate length CMOS technology