Epitaxial lattice matching between epi-n-IZO thin films and 〈1 0 0〉 Si, GaAs and InP wafers with out any buffer layers by L-MBE technique: A novel development for III-V opto-electronic devices

Materials Chemistry and Physics

Volumn 84, Issue 1, 2004, Pages 14-19

  Ramamoorthy, K ^a   Sanjeeviraja, C ^a   Jayachandran, M ^b   Sankaranarayanan, K ^a   Misra, Pankaj ^c   Kukreja, L M ^c  

^a ALAGAPPA UNIVERSITY   (India)

^b CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^c RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

Buffer layer on InP; Laser epitaxy; Semiconducting materials; Solar cells; Thin film structure and morphology

Indexed keywords

CRYSTAL LATTICES; CRYSTALLOGRAPHY; ENERGY DISPERSIVE SPECTROSCOPY; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; SILICON WAFERS; SINGLE CRYSTALS; SOLAR CELLS; THIN FILMS; TRANSPARENCY;

BUFFER LAYER ON INP; JET VAPOR DEPOSITION (JVD); LASER EPITAXY;

EPITAXIAL GROWTH;

EID: 0942288195     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2003.09.001     Document Type: Article

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