More insights into the ZnO/a-SiC:H(B) interface - an improved TCO/p contact

Materials Research Society Symposium - Proceedings

Volumn 426, Issue , 1996, Pages 519-524

  Boehmer, E ^a   Siebke, F ^a   Rech, B ^a   Beneking, C ^a   Wagner, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BINDING ENERGY; CARBON DIOXIDE; DEPOSITION; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; HYDROGEN; INTERFACES (MATERIALS); SURFACE TREATMENT; THIN FILMS; ZINC OXIDE;

FILL FACTORS;

SEMICONDUCTING FILMS;

EID: 0030417798     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)