Characterization of GaAs/AlGaAs quantum wires by means of longitudinal photoconductivity

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 64-68

  Saraydarov, M ^a   Donchev, V ^a   Germanova, K ^a   Wang, X L ^b   Kim, S J ^c   Ogura, M ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; EMISSION SPECTROSCOPY; LIGHT POLARIZATION; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTRUM ANALYSIS; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; INFRARED PREILLUMINATION; OPTICAL TRANSITION ENERGIES; PHOTOLUMINESCENCE EXCITATION SPECTRA; SPECTRAL STRUCTURES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0942279139     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629774     Document Type: Article

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