Modification of optical properties by strain-induced piezoelectric effects in ultrahigh-quality V-groove AlGaAs/GaAs single quantum wire

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1894-1896

  Liu, Xing Quan ^a,b   Wang, Xue Lun ^a,b   Ogura, Mutsuo ^a,b   Guillet, Thierry ^c,d   Voliotis, Valia ^c,d   Grousson, Roger ^c,d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c CNRS   (France)

^d UNIVERSITÉ D EVRY VAL D ESSONNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION INTENSITY; ALGAAS/GAAS; DENSITY-DEPENDENT; EXCITATION POWER; HE-NE LASERS; HOLE WAVE FUNCTIONS; INTERNAL ELECTRIC FIELDS; LOW TEMPERATURES; PHOTOLUMINESCENCE EXCITATION; PIEZOELECTRIC FIELD EFFECTS; PIEZOELECTRIC POLARIZATIONS; QUANTUM-WIRE STRUCTURES; SINGLE QUANTUM; SPATIAL SEPARATION; V-GROOVE;

CHEMICAL MODIFICATION; ELECTRIC EXCITATION; ELECTRIC FIELDS; ELECTRIC PROPERTIES; NANOWIRES; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WIRE;

OPTICAL PROPERTIES;

EID: 79955997358     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459761     Document Type: Article

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