Charge trapping and current-voltage bistability in InGaAs quantum wires

Journal of Applied Physics

Volumn 80, Issue 2, 1996, Pages 936-940

  Cingolani, R ^a   Rinaldi, R ^a   De Vittorio, M ^a   Vasanelli, L ^a   Cola, A ^b   Marti, U ^c   Reinhart, F K ^c  

^a INFM   (Italy)

^b CNR   (Italy)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346594732     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362904     Document Type: Article

References (16)

1. R. Cingolani and R. Rinaldi, Rivista Nuovo Cimento 16, 1 (1993).
2. M. Gailhanou, T. Baumbach, U. Marti, P. L. Silva, F. K. Reinhart, and M. Ilegems, Appl. Phys. Lett. 62, 1623 (1993).
3. J. Christen, E. Kapon, E. Colas, D. M. Hwang, L. M. Schiavone, M. Grundmann, and D. Bimberg, Surf. Sci. 267, 257 (1992); J. Christen, E. Kapon, H. Grundhan, D. M. Hwang, M. Joschro, D. Binberg, Phys. Status Solidi B 173, 307 (1992).
4. J. Christen, E. Kapon, E. Colas, D. M. Hwang, L. M. Schiavone, M. Grundmann, and D. Bimberg, Surf. Sci. 267, 257 (1992); J. Christen, E. Kapon, H. Grundhan, D. M. Hwang, M. Joschro, D. Binberg, Phys. Status Solidi B 173, 307 (1992).
5. Y. D. Gaulechet, P. Roengten, and V. Graf, Appl. Phys. Lett. 53, 2638 (1988).
6. E. Kapon, K. Kash, E. M. Clausen, D. M. Hwang, and E. Colas, Appl. Phys. Lett. 60, 477 (1992); M. Walther, E. Kapon D. M. Hwang, E. Colas, and L. Nunes, Phys. Rev. B 45, 6333 (1992).
7. E. Kapon, K. Kash, E. M. Clausen, D. M. Hwang, and E. Colas, Appl. Phys. Lett. 60, 477 (1992); M. Walther, E. Kapon D. M. Hwang, E. Colas, and L. Nunes, Phys. Rev. B 45, 6333 (1992).
8. R. Rinaldi, M. Ferrara, R. Cingolani, U. Marti, D. Martin, F. Morier-Genoud, P. Ruterana, and F. K. Reinhart, Phys. Rev. B 50, 11 795 (1994).
9. U. Marti, M. Pfister, and F. K. Reinhart (private communication).
10. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 50, 14 187 (1994).
11. R. Rinaldi, R. Cingolani, M. Lepore, M. Ferrara, I. M. Catalano, F. Rossi, L. Rota, E. Molinari, P. Lugli, U. Marti, D. Martin, F. Morier-Gemoud, P. Ruterana, and F. K. Reinhart, Phys. Rev. Lett. 73, 2899 (1994).
12. Y. Abe, Semicond. Sci. Technol. 9, 603 (1994).
13. M. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
14. A similar hysteresis cycle is observed in the capacitance-voltage (C-V) characteristic by changing the voltage sweep. In the upwards sweep the capacitance grows considerably beyond 4 V, corresponding to the critical voltage for the negative resistance behavior observed in the I-V characteristic. The capacitance hysteresis disappears at higher temperatures (above 150 K), consistent with the I-V experiments.
15. The energy position of this low-energy structure in the PC spectra is consistent with the spectral position of the photoluminescence (PL) band due to recombination processes of the wire ground state. The intrinsic nature of this recombination process is confirmed by the intensity and temperature-dependent PL spectra and by the peculiar magnetoluminescence shift of the emission bands.
16. R. Rinaldi, R. Cingolani, L. Decaro, M. Lomascolo, M. Di Dio, L. Tapfer, V. Marti, and F. K. Reinhart J. Opt. Soc. Am. B 13, May (1996).