Electron transport properties in a GaAs/AlGaAs quantum wire grown on V-grooved GaAs substrate by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2399-2403

  Hahn, Cheol Koo ^a   Sugaya, Takeyoshi ^a   Jang, Kee Youn ^a,b   Wang, Xue Lun ^a   Ogura, Mutsuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Channel switching; FME; Quantum wire FET; Universal conductance

Indexed keywords

COULOMB BLOCKADE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

FLOW RATE MODULATED EPITAXY; GATE BIAS; NEGATIVE DIFFERENTIAL RESISTANCE; NONLINEAR CONDUCTANCE PHENOMENA; WEAK CARIER COUPLING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0038009567     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2399     Document Type: Article

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