Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 556-560

  Wang, Xue Lun ^a,b   Ogura, Mutsuo ^a,b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE; FLOW RATE MODULATION EPITAXY; TERTIARYBUTYLARSINE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0034497859     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00777-6     Document Type: Article

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