Room-temperature single-electron charging effects in an ambipolar single-walled carbon nanotube grown by chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2848-2851

  Amlani, Islamshah ^a   Zhang, Ruth ^a   Tresek, John ^a   Tsui, Raymond K ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; ELECTROSTATICS; GATES (TRANSISTOR); LITHOGRAPHY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

CHARGING EFFECTS; SINGLE-ELECTRON TRANSISTORS (SET);

CARBON NANOTUBES;

EID: 0942267535     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1615977     Document Type: Conference Paper

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