Boron-retarded gate dielectric formed by dry oxidation of thermal nitride

Journal of the Electrochemical Society

Volumn 151, Issue 1, 2004, Pages

  Wu, Yung Hsien ^a   Ku, Chia Lin ^a   Wang, Jiun Fang ^a  

^a ProMOS Technologies Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; NITRIDES; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

ATOMIC FORCE SPECTROSCOPY; BORON RETARDED GATE DIELECTRIC; DRY OXIDATION; THERMAL NITRIDE; TRANSMISSION ELECTRON SPECTROSCOPY;

GATES (TRANSISTOR);

EID: 0842333180     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1628237     Document Type: Article

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