메뉴 건너뛰기




Volumn 50, Issue 3, 2002, Pages 760-779

Microwave solid-state active devices

Author keywords

Active device; Diode; Electron beam; Heterostructure; Lithography; MBE; Microwave; Molecular beam epitaxy; Semiconductor; Solid state device; Transistor

Indexed keywords

SOLID-STATE ACTIVE DEVICES;

EID: 0036500944     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.989960     Document Type: Article
Times cited : (43)

References (72)
  • 7
    • 0008649161 scopus 로고
    • Junction fieldistors
    • Nov.
    • (1952) Proc. IRE , vol.40 , pp. 1377-1381
  • 9
    • 0008666923 scopus 로고
    • Negative resistance arising from transit time in semiconductor diodes
    • July
    • (1954) Bell Syst. Tech. J. , vol.33 , pp. 799-826
  • 16
    • 84937654709 scopus 로고
    • Transferred electron amplifiers and oscillators
    • Feb.
    • (1962) Proc. IRE , vol.50 , pp. 185-189
    • Hilsum, C.1
  • 18
    • 36149018587 scopus 로고
    • New phenomenon in narrow germanium p-n junctions
    • (1958) Phys. Rev. , vol.109 , pp. 603
    • Esaki, L.1
  • 38
    • 0018480290 scopus 로고
    • Large-signal performance of microwave transit-time devices in mixed tunneling and avalanche breakdown
    • June
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 941-948
  • 47
    • 84938006654 scopus 로고
    • Theory of a wide-gap emitter for transistors
    • Nov.
    • (1957) Proc. IRE , vol.45 , pp. 1535-1537
    • Kroemer, H.1
  • 57


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.